Displacement damage refers to the structural damage imparted on the crystal lattice of the device by highly-energetic particles. This essentially involves the creation of crystal imperfections such as lattice atoms displaced to new defect locations and vacant lattice sites. This effect is detrimental to the device because the electrical properties at the defect’s region get altered by the introduction of new energy states inside the semiconductor’s energy band gap region. The defects can act in different undesired ways for the device function such as charge traps, recombination centres, generation centres of thermal charge etc.
Therefore, in contrast to TID, Displacement Damage Dose (DDD) encompases all the non-ionising dose effects on a device and is also known as Total Non-Ionising Dose (TNID). TNID effects are realised as an increased defect concentration throughout the device bulk as opposed to surface or interface regions in the TID case and are usually independent of the flux and the device biasing conditions.
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